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HN1B04FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FE
Audio Frequency General Purpose Amplifier Applications
Q1:High voltage and high current
: VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Unit: mm
Q2:
High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 60 50 5 150 30 Unit V V V mA mA
JEDEC JEITA TOSHIBA 2-2N1G Weight: 3.0mg (typ.)
Marking
6
Unit V V V mA mA
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -50 -50 -5 -150 -30
Type Name 5 4 hFE Rank
1D
1 2 3
Equivalent Circuit (Top View)
6 5 4
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 100 150 -55~150 Unit mW C C
Q1
Q2
1
2
3
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating
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2007-11-01
HN1B04FE
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA IC = 100mA, IB = 10mA VCE = 10V, IC = 1mA VCB = 10V, IE = 0, f = 1MHz Min 120 80 Typ. 0.1 2 Max 0.1 0.1 400 0.25 V MHz pF Unit A A
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -6V, IC = -2mA IC = -100mA, IB = -10mA VCE = -10V, IC = -1mA VCB = -10V, IE = 0, f = 1MHz Min 120 80 Typ. -0.1 4 Max -0.1 -0.1 400 -0.3 V MHz pF Unit A A
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
2
2007-11-01
HN1B04FE
Q1 (NPN transistor)
3
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HN1B04FE
Q2 (PNP transistor)
4
2007-11-01
HN1B04FE
(Q1, Q2 Common)
PC* - Ta
(mW) COLLECTOR POWER DISSIPATION PC
200
150
100
50
0 0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (C)
*:Total Rating
5
2007-11-01
HN1B04FE
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-11-01

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